1. 透過電路修改與驗證，不需多次改版光罩，而是透過FIB線路修補去對IC做局部的蝕刻和沉積，功能定案後只需改版該次光罩再行量產，可大幅降低產品開發或改版的實驗時間與經費。
2. 驗証IC內部訊號只需利用FIB做出PAD(訊號擷取點)，再配合點針設備或E-beam去做觀測。

1. Iodine (Al metal etching) 鋁製程線路蝕刻
2. C2 (Cu metal etching) 銅製程線路蝕刻
3. XeF2 (SiO2 etching) 護層蝕刻
4. SiQ2 (oxide deposition)氧化層沉積
5. Tungsten (W conductor deposition) 銅及鋁製程線路沉積(材料：鎢)

FEI-IET FIB機台提供Knights-Camelot軟體進行CAD/GDS定位，可解決CSP backside施作瓶頸，適合各種封裝體以及8吋wafer。

FEI Vectra-IET FIB Specification

Ion Column: Visionary, Ga liquid metal

Acc. Voltage: 5kV – 50 kV

Beam Current: 1.0 pA – 15.0 nA

Image Resolution: 5nm

Stage: 2-axes 8″ Laser interferometer stage

X, Y motion 200 mm

Image Rotation 360

End Point Detection

Stage current end-pointing

Gas assisted Etching ( Chlorine, Xenon, Water )

Deposition ( Tungsten )

Insulator deposition ( Siloxane/TMTCS, Oxygen )

Cooper Removal ( CoppeRX )

GDS Navigation