Dynamic EMMI analysis (Dynamic EMMI) is applied to provide a signal to drive the IC into the leakage state with an external test platform or other application board and then detect the leakage parts with emission microscope. As the leakage current of the IC is not created by static bias voltage, so the leakage current shall be be observed with dynamic signal.

Dynamic Laser Scanning Analysis (DALS) provides signals to drive the IC into a critical failure state with an external test platform or other application boards and offers laser light scanning with failure analysis equipment to detect the position of the critical failure. As the IC failure is in the critical mode (such as voltage, frequency and temperature) rather than the general common failure mode.

Electronic measurement (E-beam) is applied to inspect the defects of semiconductor devices and the major defective part is electrical defects, followed by physical defects.

Time-Resolved Emission (TRE for abbreviation) is applied to inspect the defects of semiconductor components. It is a common measurement to use non-invasive waveform that can detect the time waveform of the internal nodes from the back  of chip. The perfect TRE system enables to provide a high bandwidth and detect  dimension accuracy to display the waveform of all nodes inside the chip. Therefore,  TRE waveform is applied to detect incorrect signals

 

1. When saturated, the high electric field in the pinch region accelerates most of the carriers
2. High-energy carriers release some energy in the form of photons

 

Electro Optical Probing / Electro Optical Frequency Mapping or Laser Voltage Image+Probe， EOP/EOPM or LVX：As the IC occurs functional failure, and it is necessary to measure and analyze the signals of the IC with the electronic optic effect to detect the small signals and measure the waveform, time for IC problems detection and analysis.